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| BD241BFP BD242BFP COMPLEMENTARY SILICON POWER TRANSISTORS s s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded isolated package. It is inteded for power linear and switching applications. The complementary PNP types is the BD242BFP. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CER V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (R BE = 100 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 C Storage Temperature Max. O perating Junction Temperature o Value BD241BFP BD242BFP 90 80 5 3 5 1 24 -65 to 150 150 Uni t V V V A A A W o o C C For PNP types voltage and current values are negative. April 1998 1/4 BD241BFP / BD242BFP THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 5.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO I CES I EBO Parameter Collector Cut-off Current (IB = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 60 V V CE = 80 V V EB = 5 V I C = 30 mA 80 Min. Typ . Max. 0.3 0.2 1 Un it mA mA mA V V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) V BE(ON) h FE* Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain IC = 3 A IC = 3 A IC = 1 A IC = 3 A I B = 0.6 A V CE = 4 V V CE = 4 V V CE = 4 V 25 10 1.2 1.8 V V Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP types voltage and current values are negative. 2/4 BD241BFP / BD242BFP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 F D G1 E H F2 123 L2 L4 G 3/4 BD241BFP / BD242BFP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 4/4 |
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